? 2006 ixys corporation all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c55v v dgr t j = 25 c to 175 c; r gs = 1 m ? 55 v v gsm transient 20 v i d25 t c = 25 c 182 a i lrms lead current limit, rms 75 a i dm t c = 25 c, pulse width limited by t jm 490 a i ar t c = 25 c25a e as t c = 25 c 1.0 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 3 v/ns t j 175 c, r g = 5 ? p d t c = 25 c 360 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c t sold plastic body for 10 seconds 260 c m d mounting torque (to-220) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a55v v gs(th) v ds = v gs , i d = 250 a 2.0 4.0 v i gss v gs = 20 v, v ds = 0 v 200 na i dss v ds = v dss 5 a v gs = 0 v t j = 150 c 250 a r ds(on) v gs = 10 v, i d = 25 a, notes 1, 2 3.8 5.0 m ? trenchmv tm power mosfet preliminary technical information n-channel enhancement mode avalanche rated ixta182n055t ixtp 182n055t v dss =55 v i d25 = 182 a r ds(on) 5.0 m ? ? ? ? ? ds99626 (11/06) to-263 (ixta) to-220 (ixtp) g s g d s g = gate d = drain s = source tab = drain (tab) (tab) features ultra-low on resistance unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect 175 c operating temperature advantages easy to mount space savings high power density applications automotive - motor drives - high side switch - 12v battery - abs systems dc/dc converters and off-line ups primary- side switch high current switching applications
ixys reserves the right to change limits, test conditions, and dimensions. ixta182n055t IXTP182N055T symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d =60 a, note 1 65 100 s c iss 4850 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 954 pf c rss 212 pf t d(on) resistive switching times 36 ns t r v gs = 10 v, v ds = 30 v, i d = 25 a 35 ns t d(off) r g = 5 ? (external) 53 ns t f 38 ns q g(on) 114 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 25 a 30 nc q gd 32 nc r thjc 0.42 c/w r thcs to-220 0.50 c/w source-drain diode symbol test conditions characteristic values t j = 25 c unless otherwise specified) min. typ. max. i s v gs = 0 v 182 a i sm pulse width limited by t jm 490 a v sd i f = 25 a, v gs = 0 v, note 1 1.0 v t rr i f = 25 a, -di/dt = 100 a/ s70ns v r = 25 v, v gs = 0 v notes: 1. pulse test, t 300 s, duty cycle d 2 %; 2. on through-hole packages, r ds(on) kelvin test contact location must be 5 mm or less from the package body. dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 a1 2.03 2.79 .080 .110 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.46 0.74 .018 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 7.11 8.13 .280 .320 e 9.65 10.29 .380 .405 e1 6.86 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.38 0 .015 r 0.46 0.74 .018 .029 to-263aa (ixta) outline pins: 1 - gate 2 - drain 3 - source 4, tab - drain pins: 1 - gate 2 - drain 3 - source 4, tab - drain to-220ab (ixtp) outline ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6771478 b2 7,071,537 preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre- production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice.
? 2006 ixys corporation all rights reserved ixta182n055t IXTP182N055T fig. 1. output characteristics @ 25oc 0 20 40 60 80 100 120 140 160 180 200 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 2. extended output characteristics @ 25oc 0 40 80 120 160 200 240 280 320 0123456 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 7v 5v fig. 3. output characteristics @ 150oc 0 20 40 60 80 100 120 140 160 180 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 v ds - volts i d - amperes v gs = 10v 9v 8v 6v 5v 7v fig. 4. r ds(on) normalized to i d = 91a value vs. junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 182a i d = 91a fig. 5. r ds(on) normalized to i d = 91a value vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 0 40 80 120 160 200 240 280 320 i d - amperes r ds(on) - normalized v gs = 10v 15v - - - - t j = 175oc t j = 25oc fig. 6. drain current vs. case temperature 0 20 40 60 80 100 120 140 -50 -25 0 25 50 75 100 125 150 175 t c - degrees centigrade i d - amperes external lead current limit for to-263 (7-lead) external lead current limit for to-3p, to-220, & to-263
ixys reserves the right to change limits, test conditions, and dimensions. ixta182n055t IXTP182N055T fig. 7. input admittance 0 30 60 90 120 150 180 210 240 270 3.5 4 4.5 5 5.5 6 6.5 7 7.5 v gs - volts i d - amperes t j = -40oc 25oc 125oc fig. 8. transconductance 0 20 40 60 80 100 120 140 0 30 60 90 120 150 180 210 240 270 i d - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 9. forward voltage drop of intrinsic diode 0 30 60 90 120 150 180 210 240 270 300 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 v sd - volts i s - amperes t j = 150oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100110120 q g - nanocoulombs v gs - volts v ds = 27.5v i d = 25a i g = 10ma fig. 11. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarad s f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 10 100 1,000 1 10 100 v ds - volts i d - amperes t j = 175oc t c = 25oc 25s 1ms 100s r ds(on) limit @ v gs = 10v 10ms dc
? 2006 ixys corporation all rights reserved ixta182n055t IXTP182N055T fig. 14. resistive turn-on rise time vs. drain current 22 24 26 28 30 32 34 36 38 25 30 35 40 45 50 i d - amperes t r - nanosecond s r g = 5 ? v gs = 10v v ds = 30v t j = 125oc t j = 25oc fig. 15. resistive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 4 6 8 101214161820 r g - ohms t r - nanoseconds 30 34 38 42 46 50 54 58 t d ( o n ) - nanoseconds t r t d(on) - - - - t j = 125oc, v gs = 10v v ds = 30v i d = 50a i d = 25a fig. 16. resistive turn-off switching times vs. junction temperature 34 36 38 40 42 44 46 48 50 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanosecond s 50 53 56 59 62 65 68 71 74 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 30v i d = 25a i d = 50a fig. 17. resistive turn-off switching times vs. drain current 34 36 38 40 42 44 46 48 24 28 32 36 40 44 48 i d - amperes t f - nanoseconds 46 50 54 58 62 66 70 74 t d ( o f f ) - nanoseconds t f t d(off) - - - - r g = 5 ? , v gs = 10v v ds = 30v t j = 125oc t j = 25oc fig. 13. resistive turn-on rise time vs. junction temperature 22 24 26 28 30 32 34 36 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 5 ? v gs = 10v v ds = 30v i d = 50a i d = 25a fig. 18. resistive turn-off switching times vs. gate resistance 40 60 80 100 120 140 160 180 4 6 8 101214161820 r g - ohms t f - nanoseconds 25 50 75 100 125 150 175 200 t d ( o f f ) - nanoseconds t f t d(off) - - - - t j = 125oc, v gs = 10v v ds = 30v i d = 50a i d = 25a
ixys reserves the right to change limits, test conditions, and dimensions. ixta182n055t IXTP182N055T ixys ref: t_182n055t (4v) 6-01-06-a.xls fig. 19. maximum transient thermal impedance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w
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